| PART |
Description |
Maker |
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
| K9K8G08U1E |
4Gb E-die NAND Flash
|
Samsung
|
| TS16GJFV15 |
16GB USB2.0 JetFlash垄芒V15
16GB USB2.0 JetFlash?V15
|
Transcend Information. Inc.
|
| TS8GJF300 |
8GB USB2.0 JetFlash垄莽300
8GB USB2.0 JetFlash?300
|
Transcend Information. Inc.
|
| S30MS01GP25TAW000 S30MS01GP25TAW003 S30MS01GP25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PDSO48
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 32M X 16 FLASH 1.8V PROM, 25 ns, PDSO48
|
Spansion, Inc.
|
| TS8GJF220 |
8GB USB2.0 JetFlash垄芒220
8GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
| TS8GJF2A |
8GB USB2.0 JetFlash垄莽
8GB USB2.0 JetFlash?
|
Transcend Information. Inc.
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
